Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers

Ruthenium oxide (RuO2) has received significant attention in recent years for its photocatalytic properties and photoelectrochemical (PEC) performance. In the present research, RuO2 nanolayers were grown on n-type porous silicon (PSi) by metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). The morphology, mechanical and optical properties of produced nanostructures were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, diffuse reflectance and photoluminescence (PL) spectroscopy. It was shown that that MOCVD gives non-uniform distribution of RuO2 along the pore and it is deposited mainly in the near-surface of PSi, while distribution of ruthenium obtained by ALD looks conformal over the entire pore. The mean size of RuO2 nanocrystallites and mechanical stresses were determined by TEM, XRD and Raman spectroscopy. It was demonstrated that samples obtained by ALD demonstrate a good crystallinity, while crystalline phase for samples produced by MOCVD improve with RuO2 layer thickness increasing. It was established the formation of hydrated RuO2 during ALD and MOCVD. It was shown that the samples produced by MOCVD have slightly higher electrical conductivity than ALD samples. The average value of energy gap (E-g) for samples prepared by MOCVD depended on the number of injections. RuO2 nanolayers quenched intrinsic PL from the PSi matrix. The correlation between structural, optical, and mechanical properties of samples produced by MOCVD and ALD was discussed.