期刊
APPLIED SURFACE SCIENCE
卷 467, 期 -, 页码 119-123出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2018.10.157
关键词
Amorphous semiconductor; Thin film; Surface oxidation; Ultraviolet irradiation; Raman spectroscopy; Atomic force microscopy
类别
资金
- DAAD [57313677, 91574393]
Amorphous As2S3 films with surface roughness near 0.5 nm were prepared by thermal evaporation. Raman measurements performed under ultraviolet (UV) laser excitation (325 nm) revealed a series of sharp intense peaks appearing at laser power density P-exc above 150 kW/cm(2). No such effects were observed at Raman measurements under visible (514.7 or 632.8 nm) light excitation, even for much higher P-exc values. The new Raman peaks are identified as arsenolite (As2O3) features. UV light-assisted oxidation of the As2S3 surface is discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据