期刊
APPLIED PHYSICS LETTERS
卷 114, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5085763
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资金
- Ministry of Electronics and Information Technology (MEITY), India
- IMPacting Research Innovation and Technology (IMPRINT), India
A highly efficient room temperature photodetector with broadband (400 nm-1800 nm) photoresponse based on the MoSe2/Ge heterojunction has been reported here. The fabricated MoSe2/Ge heterojunction exhibits high responsivity up to 24 A/W in the near-infrared wavelength range (750 nm) and 35 A/W in the short wavelength infrared range (1550 nm). The interfacial charge transfer at the Ge-MoSe2 heterojunction enables self-powered photo-detection in fabricated devices with zero bias responsivity values of 250 mA/W (750 nm) and 400 mA/W (1550 nm). Transient photoresponse measurements of the MoSe2/Ge heterojunction under the modulated light reveal that the devices are capable of working up to 20 kHz with a fast rise/fall time of 13.5/1.2 mu sec. These results demonstrate the feasibility of achieving a high-performance photodetector derived from the MoSe2/Ge heterojunction for broadband infrared detection. Published under license by AIP Publishing.u
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