期刊
APPLIED PHYSICS LETTERS
卷 114, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5074116
关键词
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资金
- Russian Science Foundation [18-49-08001]
- Ministry of Science and Technology (MOST) of Taiwan [107-2923-E-009-001-MY3]
- Russian Science Foundation [18-49-08001] Funding Source: Russian Science Foundation
Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the highresistive state in the RRAM based on SiOx at temperatures above room temperature. Published under license by AIP Publishing.
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