期刊
APPLIED PHYSICS LETTERS
卷 114, 期 4, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.5079313
关键词
-
资金
- National Natural Science Foundation of China (NSFC) [61674062, 61821003]
Spin-orbit torque (SOT) has been proposed as an alternative writing mechanism for the next-generation magnetic random access memory (MRAM), due to its energy efficiency and high endurance in perpendicular magnetic anisotropic materials. However, the three-terminal structure of SOT-MRAM increases the cell size and consequently limits the feasibility of implementing high density memory. Multilevel storage is a key factor in the competitiveness of SOT-MRAM technology in the nonvolatile memory market. This paper presents an experimental characterization of a multilevel SOT-MRAM cell based on a perpendicularly magnetized Ta/CoFeB/MgO heterostructure and addresses the initialization-free issue of multilevel storage schemes. Magneto-optical Kerr effect microscopy and micromagnetic simulation studies confirm that the multilevel magnetization states are created by changing a longitudinal domain wall pinning site in the magnet. The realization of robust intermediate switching levels in the commonly used perpendicularly magnetized Ta/CoFeB/MgO heterostructure provides an efficient way to switch magnets for low-power, high-endurance, and high-density memory applications. Published under license by AIP Publishing.
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