期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 14, 页码 13589-13597出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b00940
关键词
1D/2D hybrid system; self-integrated UV photodetector; InGaN nanorod arrays; van der Waals epitaxy; first-principles calculations
资金
- National Natural Science Foundation of China [51702102, 51602105, 51572091, 51577070]
- National Science Fund for Excellent Young Scholars of China [51422203]
- Natural Science Foundation of Guangdong Province [2017A030313331, 2017A030310518]
- National Defense Scientific and Technological Innovation Special Zone [17-163-13-ZT-008-029-04]
- National Natural Science Foundation Major Instrument Special Project of China [51727901]
- State Key Laboratory of Space Technology
Integration of one-dimensional (1D) semiconductors with two-dimensional (2D) materials into hybrid systems is identified as promising applications for new optoelectronic and photodetection devices. Herein, a self-integrated hybrid ultraviolet (UV) photodetector based on InGaN nanorod arrays (NRAs) sandwiched between transparent top and back graphene contacts forming a Schottky junction has been demonstrated for the first time. The controlled van der Waals epitaxy of the vertically aligned InGaN NRA assembly on graphene-on-Si substrates is achieved by plasma-assisted molecular beam epitaxy. Moreover, the self-assembly formation mechanisms of InGaN NRAs on graphene are clarified by theoretical calculations with first-principles calculations based on density functional theory. The peculiar 1D/2D heterostructure hybrid system-based integrated UV photodetector simultaneously exhibits ultrafast response time (similar to 50 mu s) and superhigh photosensitivity (similar to 10(5) A/W). It is highly believed that the concept proposed in this work has a great potential and can be widely applied for the next-generation integrated 1D/2D nano-based optoelectronic and photodetection devices.
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