期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 14, 页码 13598-13607出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b01078
关键词
2D TMD; 2D PtSe2; vertical growth; low-temperature growth; layer orientation transition
资金
- University of Central Flordida [20080742]
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2017M3D1A1039553]
- National Research Foundation of Korea [NRF-2018R1D1A1B07043973]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2017R1A2B2006568, 2017R1A5A1014862]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20173010013340]
- Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20173010013340]
- Disaster and Safety Management Institute - Korea Coast Guard of Korean government [KCG-01-2017-02]
- Korea Institute of Marine Science & Technology Promotion (KIMST) [201904372] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe2) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe2 layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural-electrical properties in 2D PtSe2 layers grown at a low temperature (i.e., 400 degrees C). The layer orientation of 2D PtSe2 grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe2 layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe2 layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe2 layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe2 layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.
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