期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 8, 页码 8266-8275出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b22103
关键词
Black phosphorus; Rhenium disulfide; broken-gap heterojunction; quantum tunneling; photovoltaics; logic circuitry
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [NRF-2016K1A1A2912707, 2016R1A2B4012931, 2018R1D1A1B07049669]
- Institute for Information & Communications Technology Promotion (IITP) - Ministry of Science and ICT of Korea [B0117-16-1003]
- DST-INSPIRE Faculty award program - Department of Science and Technology, Government of India [IFA14-PH-109]
- National Research Foundation of Korea [2018R1D1A1B07049669] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The broken-gap (type III) van der Waals heterojunction is of particular interest, as there is no overlap between energy bands of its two stacked materials. Despite several studies on straddling-gap (type I) and staggered-gap (type II) vdW heterojunctions, comprehensive understanding of current transport and optoelectronic effects in a type-III heterojunction remains elusive. Here, we report gate-tunable current rectifying characteristics in a black phosphorus (BP)/rhenium disulfide (ReS2) type-III p-n heterojunction diode. Current transport in this heterojunction was modeled using the Simmons approximation through direct tunneling and Fowler-Nordheim tunneling in lower- and higher-bias regimes, respectively. We showed that a p-n diode based on a type-III heterojunction is mainly governed by tunneling-mediated transport, but that transport in a type-I p-n heterojunction is dominated by majority carrier diffusion in the higher-bias regime. Upon illumination with a 532 nm wavelength laser, the BP/ReS2 type-III p-n heterojunction showed a photo responsivity of 8 mA/W at a laser power as high as 100 mu W and photovoltaic energy conversion with an external peak quantum efficiency of 0.3%. Finally, we demonstrated a binary inverter consisting of BP p-channel and ReS2 n-channel thin film transistors for logic applications.
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