期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 8, 页码 8419-8427出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b20538
关键词
2D perovskite; lead-free; transition metal dichalcogenide; graphene; heterostructure; photodetector
资金
- NSFC [61674060]
- Fundamental Research Funds for the Central Universities, HUST [2017KFYXJJ030, 2017KFXKJC002, 2017KFXKJC003, 2018KFYXKJC016]
- New Mexico EPSCoR [NSF-1301346]
Two-dimensional (2D) Ruddlesden-Popper perovskites have attracted great interest for their promising applications in high-performance optoelectronic devices owing to their greatly tunable band gaps, layered characteristics, and better environmental stability over three-dimensional (3D) perovskites. Here, we for the first time report on photodetectors based on few-layer MoS2 (n-type) and lead-free 2D perovskite (PEA)(2)SnI4 (p-type) heterostructures. The heterojunction device is capable of sensing light over the entire visible and near-infrared wavelength range with a tunable photoresponse peak. By using few-layer graphene flakes as the electrical contact, the performance of the heterostructures can be improved with a responsivity of 1100 A/W at 3 V bias, a fast response speed of similar to 40 ms under zero bias, and an excellent rectification ratio of 500. Importantly, the quantum efficiency can achieve 38.2% at zero bias, which is comparable or even higher than that of 3D perovskite/2D material photodetectors. Importantly, the spectral response peak of heterojunctions gradually shifts in a wide spectral range from the band edge of MoS2 toward that of (PEA)(2)SnI4 with the external bias. We believe these 2D perovskite/2D material heterostructures with a great diversity represent an interesting system for investigating the fundamental optoelectronic properties and open up a new pathway toward 2D perovskite-based optoelectronic devices.
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