Tuning of Nanopatterns on Si (100) Substrate: Role of Ion Beam Processing Parameters During Sputtering

In recent years, a fast, reproducible and well-controlled way of nanopattern fabrication on material surface is a prime concern in numerous branches of modern science. Through atomic force microscopy study, here we show an investigation on tuning ability of topography formation by low energy ion beam sputtering on Si (100) surface as function of different ion beam processing parameters like ion incidence angle, ion energy and ion current density. Also, the evolutions of topographies are discussed within proposed theoretical models of ion beam induced pattern formation to get simultaneously an insight into the pattern formation mechanism and to gain better control on this technique.