期刊
ADVANCED MATERIALS
卷 28, 期 12, 页码 2345-2351出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201505154
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资金
- National Research Foundation of Korea (NRF) [2013R1A2A2A01015516]
- Global Frontier R&D Program at the Center for Hybrid Interface Materials (HIM) - Ministry of Science, ICT & Future Planning [2013M3A6B1078873]
- National Research Foundation of Korea [2013R1A2A2A01015516, 2013M3A6B1078873] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10 9 and a maximum hole mobility of 132 cm(2) V-1 s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications.
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