期刊
ADVANCED MATERIALS
卷 28, 期 42, 页码 9378-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602626
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- Institute for Basic Science [IBS-R011-D1]
An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2 on a SiO2/Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confi rmed further by the degraded photoluminescence compared to that from suspended MoS2.
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