期刊
ADVANCED MATERIALS
卷 28, 期 42, 页码 9408-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201603723
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资金
- National Natural Science Foundation of China [51121061, 51272225, 11274343, 11474311, 21525311, 21373045]
- National Science Fund for Distinguished Young Scholars [51025103]
- National Natural Science Foundation of Jiangsu [BK20130016]
- Program for New Century Excellent Talents in University [NCET-13-0993]
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving air-stable black-phosphorus devices.
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