期刊
ADVANCED MATERIALS
卷 28, 期 26, 页码 5276-5283出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601171
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资金
- Research Grants Council of Hong Kong [GRF 402613]
- University Grants Committee of Hong Kong [AoE/P-03/08]
Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V-1 s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.
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