期刊
ADVANCED MATERIALS
卷 28, 期 31, 页码 6574-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600160
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资金
- Department of Energy (DOE) [DE-SC0014430]
- National Science Foundation [DMR-1420620, DMR-0723032, OCI-0821527, ECCS-1542081]
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [FG02-07ER46417, DE-SC0002334]
- National Center for Electron Microscopy at Lawrence Berkeley National Laboratory under the DOE [DE-AC02-05CH11231]
- U.S. Department of Energy (DOE) [DE-SC0014430] Funding Source: U.S. Department of Energy (DOE)
Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (approximate to 10(5)) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferro electric thin-film devices.
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