期刊
ADVANCED MATERIALS
卷 28, 期 48, 页码 10623-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201603293
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资金
- National Natural Science Foundation of China [61521064, 61422407, 61474136, 61334007, 61574166, 6127409, 61322408, 61522408, 61574169, 61471377, 61306117]
- National High Technology Research Development Program [2014AA032901]
- Beijing Training Project for the Leading Talents in ST [ljrc201508]
- NUDT Research Funding Program [JC-15-04-02]
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics
- Chinese Academy of Sciences, Youth Innovation Promotion Association CAS [2015096]
- CAEP Microsystem and THz Science and Technology Foundation [CAEPMT201504]
Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.
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