期刊
ADVANCED MATERIALS
卷 28, 期 38, 页码 8463-8468出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602854
关键词
adaptive optoelectronics; monolayer MoS2; piezophototronic effect
类别
资金
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-FG02-07ER46394]
- National Science Foundation [DMR-1505319, DMR-1122594]
- U.S. Department of Energy [DE-AC36-08GO28308]
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- National Natural Science Foundation of China [51432005]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1505319] Funding Source: National Science Foundation
Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at the metal-MoS2 interface to modulate the separation/transport of photo generated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.
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