期刊
ADVANCED MATERIALS
卷 28, 期 24, 页码 4824-4831出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600032
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- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2015R1A2A2A01002965]
- National Research Foundation of Korea [2015R1A2A2A01002965, 2015H1A2A1034635, 2013H1A2A1034786] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10(6) A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.
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