期刊
ADVANCED MATERIALS
卷 28, 期 41, 页码 9024-9059出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201506402
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资金
- Nano Material Technology Development Program through National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2012M3A7B4035323]
- MOTIE (Ministry of Trade, Industry Energy) [10048504]
- KSRC (Korea Semiconductor Research Consortium)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10048504] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012M3A7B4035324] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2-based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS2 in industry, as a guide for 2D material community, are also provided.
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