4.8 Article

Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering

期刊

ADVANCED MATERIALS
卷 29, 期 5, 页码 -

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604427

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资金

  1. Natural Science Foundation of China [51390472, 51372195]
  2. National 973 projects of China [2015CB654903, 2015CB654603]
  3. China Postdoctoral Science Foundation [2015M572554, 2015M582649]
  4. Fundamental Research Funds for the Central Universities

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Ultrahigh energy storage density of 52.4 J cm(-3) with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multi-layers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.

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