4.8 Article

A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory

期刊

ADVANCED MATERIALS
卷 29, 期 8, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604769

关键词

nonvolatile memory; polymer electret; vertical organic field-effect transistors; writing speed

资金

  1. Cambridge Overseas Trust
  2. Chinese Scholarship Council

向作者/读者索取更多资源

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.

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