期刊
ADVANCED MATERIALS
卷 29, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604769
关键词
nonvolatile memory; polymer electret; vertical organic field-effect transistors; writing speed
类别
资金
- Cambridge Overseas Trust
- Chinese Scholarship Council
A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.
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