4.8 Article

Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

期刊

ADVANCED MATERIALS
卷 28, 期 48, 页码 10725-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604049

关键词

-

资金

  1. Natural Science Foundation of China (NSFC) [61575059, 61675062]
  2. Fundamental Research Funds for the Central Universities [2012HGCX0003, 2013HGCH0012, 2014HGCH0005]

向作者/读者索取更多资源

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (beta-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据