期刊
ADVANCED MATERIALS
卷 28, 期 46, 页码 10275-10281出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201603126
关键词
-
类别
资金
- JSPS [15K14149, 16H04192]
- Grants-in-Aid for Scientific Research [16H04192, 15K14149] Funding Source: KAKEN
A very high hole mobility of 15 cm(2) V-1 s(-1) along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据