期刊
ADVANCED MATERIALS
卷 29, 期 4, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601959
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0008055]
- National Science Foundation [EFRI-1433541]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1433541] Funding Source: National Science Foundation
Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH3NH3PbI3 microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials.
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