4.8 Article

Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica

期刊

ADVANCED MATERIALS
卷 28, 期 34, 页码 7486-7493

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601208

关键词

amorphous oxides; electrical stress; oxide nanostructure; resistive switching

资金

  1. EPSRC [EP/K01739X/1, EP/F067496]
  2. EU FP7 project MORDRED (EU Project Grant) [261868]
  3. Engineering and Physical Sciences Research Council [1570002, 1378627, EP/L000202/1, EP/H006060/1, EP/K01739X/1] Funding Source: researchfish
  4. EPSRC [EP/L000202/1, EP/H006060/1, EP/K01739X/1] Funding Source: UKRI

向作者/读者索取更多资源

Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.

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