期刊
ADVANCED MATERIALS
卷 28, 期 34, 页码 7486-7493出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601208
关键词
amorphous oxides; electrical stress; oxide nanostructure; resistive switching
类别
资金
- EPSRC [EP/K01739X/1, EP/F067496]
- EU FP7 project MORDRED (EU Project Grant) [261868]
- Engineering and Physical Sciences Research Council [1570002, 1378627, EP/L000202/1, EP/H006060/1, EP/K01739X/1] Funding Source: researchfish
- EPSRC [EP/L000202/1, EP/H006060/1, EP/K01739X/1] Funding Source: UKRI
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.
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