期刊
ADVANCED MATERIALS
卷 28, 期 36, 页码 8029-8036出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601024
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- Ministry of Science and Technology (MOST) of Taiwan [MOST 104-2633-M-033-003, 103-2633-M-033-004, 103-2112-M-033-005-MY3, 100-2112-M-033-008-MY3]
Lead-free perovskite infrared light-emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micro meter-sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr(-1) m(-2) at a current density of 364.3 mA cm(-2) and maximum external quantum efficiency of 3.8% at 4.5 V.
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