期刊
ADVANCED MATERIALS
卷 28, 期 32, 页码 6985-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601002
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资金
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2015R1A2A2A01002965]
- National Research Foundation of Korea [2015R1A2A2A01002965, 2013H1A2A1034786, 2015R1A2A1A05001826] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A high-performance ReS2-based thin-film transistor and photodetector with high on/off-current ratio (10(4)), high mobility (7.6 cm(2) V-1 s(-1)), high photoresponsivity (2.5 x 10(7) A W-1), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O-2 plasma treatment is reported.
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