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Perovskite Materials for Light-Emitting Diodes and Lasers

期刊

ADVANCED MATERIALS
卷 28, 期 32, 页码 6804-6834

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600669

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资金

  1. National Research Foundation Singapore (NRF) [NRF-CRP14-2014-03]
  2. Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program
  3. NTU start-up grant [M4080514]
  4. Ministry of Education [RG101/15, MOE2013-T2-1-081, MOE2014-T2-1-044]
  5. NTU-A*STAR Silicon Technologies Centre of Excellence [11235100003]
  6. MOE Tier 1 grant [RG184/14]

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Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.

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