Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

ADVANCED MATERIALS

卷 28, 期 15, 页码 2923-2930

WILEY-V C H VERLAG GMBH

2D materials; ferroelectrics; field-effect transistors; nonvolatile memory; transition-metal dichalcogenides

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. NSF CAREER Award [DMR-1055938]
2. NSF [DMR-1306601]
3. NSF-TANMS Center
4. SRC FAME program
5. Direct For Mathematical & Physical Scien [1055938] Funding Source: National Science Foundation
6. Division Of Materials Research [1055938] Funding Source: National Science Foundation
7. Division Of Materials Research
8. Direct For Mathematical & Physical Scien [1306601] Funding Source: National Science Foundation