期刊
ADVANCED MATERIALS
卷 28, 期 25, 页码 5025-5030出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600606
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- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT (Information & Communication Technology) and Future Planning, Korea [2011-0031636]
- National Research Council of Science & Technology (NST), Republic of Korea [SI1603, SI1603-01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
An appropriate solution is suggested for synthesizing wafer-scale, continuous, and stoichiometric MoS2 layers with spatial homogeneity at the low temperature of 450 degrees C. It is also demonstrated that the MoS2-based visible-light photodetector arrays are both fabricated on 4 inch SiO2/Si wafer and polyimide films, revealing 100% active devices with a narrow photocurrent distribution and excellent mechanical durability.
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