4.8 Article

High-Electron- Mobility and Air-Stable 2D Layered PtSe2 FETs

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ADVANCED MATERIALS
卷 29, 期 5, 页码 -

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604230

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资金

  1. Research Grant Council of Hong Kong [PolyU 152145/15E]
  2. Hong Kong Polytechnic University [G-SB53, 1-ZVDH, 1-ZVGH]
  3. National Natural Science Foundation of China (NSFC) [61302045, 11274380, 11622437, 61674171, 91433103]
  4. Singapore National Research Foundation through the NRF RF [NRF-RF2013-08]
  5. Ministry of Science and Technology (MOST) of China [2012CB932704]
  6. Fundamental Research Funds for the Central Universities
  7. Renmin University of China [16XNLQ01, 16XNH062]

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The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2. The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material.

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