期刊
ADVANCED MATERIALS
卷 28, 期 38, 页码 8446-8454出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602645
关键词
AlGaN; coalescence; GaN; light-emitting diodes; nanowires; selective area growth; ultraviolet
类别
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- US Army Research Office [W911NF-15-1-0168]
Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire substrate through controlled nano wire coalescence by selective-area epitaxy. The coalesced Mg-doped AlGaN layers exhibit superior charge-carrier-transport properties. Semipolar-AlGaN ultraviolet light-emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large-area, dislocation-free planar photonic and electronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据