期刊
ADVANCED MATERIALS
卷 28, 期 33, 页码 7234-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601721
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-FG02-07ER46394]
- National Science Foundation [DMR-1505319]
- thousands talents program for pioneer researcher and his innovation team, China
- National Natural Science Foundation of China [51172079, 11474105]
- Science and Technology Program of Guangdong Province, China [2015B090903078, 2015B010105011]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1505319] Funding Source: National Science Foundation
The piezotronic effect is applied to modulate the physical properties of heterojunction electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure microwires. At room temperature, the conductance is increased by 165% under -1.78% compressive strains, and reduced by 48% under 1.78% tensile strains; at 77 K, this modulating effect is further improved by 890% and 940% under compressive and tensile strains, respectively.
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