期刊
ADVANCED MATERIALS
卷 28, 期 25, 页码 4983-4990出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600062
关键词
-
类别
资金
- National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP) [NRF-CRP12-2013-01]
- National Creative Research Laboratory through the National Research Foundation of Korea (NRF) [2015R1A3A2066337]
- Yonsei University Future-leading Research Initiative
- SSLS via NUS [C-380-003-003-001]
- A*STAR Computational Resource Centre (A*CRC)
Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of approximate to 300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
