4.8 Article

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

期刊

ADVANCED MATERIALS
卷 29, 期 2, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604744

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资金

  1. Engineering and Physical Sciences Research Council [EPSRC - EP/M005143/1]
  2. India-UK APEX project
  3. Winton Programme (Cambridge) for the Physics of Sustainability
  4. Cambridge Trust
  5. China Scholarship Council
  6. Nava Technology Limited
  7. LDRD program
  8. LANL
  9. EPSRC [EP/M023532/1, EP/M005143/1] Funding Source: UKRI
  10. Engineering and Physical Sciences Research Council [EP/M023532/1] Funding Source: researchfish

向作者/读者索取更多资源

Low-bandgap CH3NH3(PbxSn1-x)I-3 (0 <= x <= 1) hybrid perovskites (e.g., approximate to 1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm(2) V-1 s(-1)) intrinsic carrier mobilities.

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