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JOURNAL OF APPLIED PHYSICS (2016)
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Martin A. Green et al.
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J. M. Burst et al.
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Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
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S. Farrell et al.
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Lin Shi et al.
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Christoph Freysoldt et al.
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Zimeng Cheng et al.
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John P. Perdew et al.
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Thermodynamics of impurities in semiconductors
SK Estreicher et al.
PHYSICAL REVIEW B (2004)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
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SH Wei et al.
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