期刊
ADVANCED FUNCTIONAL MATERIALS
卷 26, 期 43, 页码 7886-7894出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201602610
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- National Research Foundation of Korea (NRF) - Korea government (MSIP) [NRF-2015R1A2A1A10054466]
- National Research Foundation of Korea [2015R1A2A1A10054466, 2016H1A2A1906533] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A specific design for solution-processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F- and OH-, respectively, which are considered as organic dopants for efficient and cost-effective n-doping processes both in n-type organic and nanocarbon-based semiconductors, such as poly[[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)] (P(NDI2OD-T2)) and selectively dispersed semiconducting single-walled carbon nanotubes by p-conjugated polymers. The dramatic enhancement of electron transport properties in field-effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge-transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution-processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon-based materials, and is thus widely applicable for developing high-performance organic and printed electronics and optoelectronics devices.
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