Influence of Substrate Temperature on LPCVD ZnO Thin Film and Cu(In, Ga)Se2 Thin Film Solar Cells

Zinc oxide (ZnO) thin films are deposited at different substrate temperatures (T-sub) by low-pressure chemical vapor deposition (LPCVD) technique. The influence of T-sub on the properties of LPCVD ZnO and the performance of copper indium gallium di-selenide (Cu(In, Ga)Se-2, CIGS) thin films are systematically investigated. The highest efficiency of 11.7% is achieved for CIGS thin film solar cells with LPCVD ZnO thin film window layers deposited at 119 degrees C. In addition, a thermal treatment at 104 degrees C before the ZnO deposition results in a pronounced efficiency enhancement, and achieved a high efficiency of 14.4% in CIGS solar cell with the structure of glass/Mo/CIGS absorber/CdS/i-ZnO/n-ITO/Al grid.