4.7 Article

Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films

期刊

APL MATERIALS
卷 6, 期 12, 页码 -

出版社

AIP Publishing
DOI: 10.1063/1.5047945

关键词

-

资金

  1. NASA Space Technology Research Fellowship
  2. U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
  3. DOE Office of Energy Efficiency and Renewable Energy (EERE) [DE-EE-00028394]
  4. DOE Office of Energy Solar Energy Technologies Office (SETO) [DE-EE-00028394]

向作者/读者索取更多资源

Although selective area growth (SAG) and coalesced SAG (cSAG) have been utilized extensively for many years to moderate the material quality of lattice-mismatched films, the geometrical factors controlling dislocations in coalesced films are difficult to visualize, and some confusion regarding the topology of dislocations for cSAG still persists. In this paper, we describe the topology of dislocations during island coalescence for cSAG, framed in terms of fundamental dislocation properties and virtual dislocations, which are used as a helpful visualization tool. We also show how the results and methods are generally applicable to coalescence of any other epitaxial film. (C) 2018 Author(s).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据