期刊
APL MATERIALS
卷 6, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5050823
关键词
-
资金
- Japan Society for the Promotion of Science Foundation [15H03881, 18H03925]
- Yazaki Memorial Foundation for Science and Technology
- MEXT Elements Strategy Initiative to Form Core Research Center
We investigated electronic properties of Ti2O3 films with film thickness of similar to 150 nm. The temperature dependence of resistivity indicated characteristic phase transitions. The insulator-to-metal transition (IMT) temperature (T-IMT) deviated from bulk T-IMT of similar to 450 K. The higher and lower T(IMT)s of 450-600 K and 200-300 K were found in a- and c-axes oriented films, respectively. In addition, the large anisotropy in conductivity parallel and perpendicular to the c-axis direction was observed in the insulating phase, which was attributed to large difference in Hall mobility. The higher T-IMT far above room temperature and the large difference in resistivity across the IMT were promising characteristics for application of Ti2O3 films in Mottronics. (C) 2018 Author (s).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据