期刊
ADVANCED SCIENCE
卷 5, 期 11, 页码 -出版社
WILEY
DOI: 10.1002/advs.201801350
关键词
defects; nickel oxide; perovskite light-emitting diodes; stability
资金
- Mid-Career Researcher Program [2018R1A2B2006198]
- BK21 Plus Program (Creative HRD Center for Future Electronics) - Ministry of Education (MOE, Korea) [22A20153013017]
- National Research Foundation of Korea (NRF)
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT (MSIP) [2017K1A4A3015437]
- Ulsan National Institute of Science and Technology (UNIST) [1.180043.01]
- UK EPSRC via Centre for Doctoral Training in Plastic Electronics [EP/G037515/1]
- KP Technology Ltd
- Ministry of Science & ICT (MSIT), Republic of Korea [2018UNIST 융합연구원 운영지원] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2018R1A2B2006198, 22A20153013017, 2017K1A4A3015437, 22A20131112367] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- EPSRC [EP/M005143/1] Funding Source: UKRI
Metal halide perovskites (MHPs) have emerged as promising materials for light-emitting diodes owing to their narrow emission spectrum and wide range of color tunability. However, the low exciton binding energy in MHPs leads to a competition between the trap-mediated nonradiative recombination and the bimolecular radiative recombination. Here, efficient and stable green emissive perovskite light-emitting diodes (PeLEDs) with an external quantum efficiency of 14.6% are demonstrated through compositional, dimensional, and interfacial modulations of MHPs. The interfacial energetics and optoelectronic properties of the perovskite layer grown on a nickel oxide (NiOx) and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate hole injection interfaces are investigated. The better interface formed between the NiOx/perovskite layers in terms of lower density of traps/defects, as well as more balanced charge carriers in the perovskite layer leading to high recombination yield of carriers are the main reasons for significantly improved device efficiency, photostability of perovskite, and operational stability of PeLEDs.
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