Flexible β-Ga2O3 Nanomembrane Schottky Barrier Diodes

Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline beta-Ga2O3 nanomembranes (NMs). In order to realize flexible high power beta-Ga2O3 SBDs, sub-micron thick freestanding beta-Ga2O3 NMs are created from a bulk beta-Ga2O3 substrate and transfer-printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of beta-Ga2O3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible beta-Ga2O3 SBDs exhibit the record high critical breakdown field strength (E-c) of 1.2 MV cm(-1) in the flat condition and 1.07 MV cm(-1) of E-c under the bending condition. Overall, flexible beta-Ga2O3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.