期刊
ADVANCED ELECTRONIC MATERIALS
卷 5, 期 3, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201800714
关键词
flexible Schottky barrier diodes; high power flexible electronics; beta-Ga2O3 nanomembrane
资金
- National Science Foundation [ECCS-1809077, ECCS-1607833]
- Research and Education in energy, Environment and Water (RENEW) Institute at the University at Buffalo
- SUNY MAM programs
Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline beta-Ga2O3 nanomembranes (NMs). In order to realize flexible high power beta-Ga2O3 SBDs, sub-micron thick freestanding beta-Ga2O3 NMs are created from a bulk beta-Ga2O3 substrate and transfer-printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of beta-Ga2O3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible beta-Ga2O3 SBDs exhibit the record high critical breakdown field strength (E-c) of 1.2 MV cm(-1) in the flat condition and 1.07 MV cm(-1) of E-c under the bending condition. Overall, flexible beta-Ga2O3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.
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