期刊
ADVANCED ELECTRONIC MATERIALS
卷 4, 期 12, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201800556
关键词
artificial synapses; indium-gallium-zinc oxide thin film transistors (IGZO TFT); persistent photoconductivity; synaptic plasticity; synaptic potentiation and depression
资金
- National Key Research and Development Program [2018YFA0208503, 2016YFA0201802, 2017YFB0701703, 2016YFA0202304]
- Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Beijing Training Project for the Leading Talents in ST [Z151100000315008]
- National Natural Science Foundation of China [61574107, 51503167, 61725404, 61574166, 61874134, 61804170, 61221004, 61404164]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000, XDB12030400]
Emulating key synaptic functions in electronic devices is quite significant in bioinspired applications. Artificial synaptic thin film transistors (TFT) offer a promising solution for efficient synapse simulation. Herein, artificial synapses based on indium-gallium-zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity is investigated. Versatile synaptic functions including paired-pulse facilitation, paired-pulse depression, and short-term memory to long-term memory transition are emulated. More importantly, these synaptic functions can be mediated by modulating the composition ratio of IGZO film. These achievements represent a major advance toward implementation of full synaptic functionality in neuromorphic hardware and the strategy that combines the photonics and the electrics has great prospects in optoelectronic applications.
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