期刊
2D MATERIALS
卷 6, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aae7f6
关键词
2d materials; tellurene; synthesis; polytypism
资金
- Computational Materials Sciences Program - US Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0014607]
- National Science Foundation Graduate Research Fellowship [DGE-1450681]
- Nanoelectronics Branch, Functional Materials Division, Materials and Manufacturing Directorate, Air Force Research Laboratory
- Air Force Office of Scientific Research Grant [AFOSR-YIP FA9550-17-1-0202]
We report the synthesis of ultrathin tellurium films, including atomically thin tellurium tri-layers, by physical vapor deposition (PVD) as well as larger area films by pulsed laser deposition (PLD). PVD leads to sub-nanometer, tri-layer tellurene flakes with distinct boundaries, whereas PLD yields uniform and contiguous sub-7 nm films over a centimeter square. The PLD films exhibit the characteristic hexagonal crystal structure of semiconducting tellurium, but high resolution transmission electron microscopy (HRTEM) reveals a unique stacking polytype in the thinner PVD-grown material. Density Functional Theory calculations predict the possible existence of three polytypes of ultrathin Te, including the alpha-type experimentally observed here. The two complementary growth methods afford a route to controllably synthesize ultrathin Te with thicknesses ranging from three atomic layers up to 6 nm with unique polytypism. Lastly, temperature dependent Raman studies suggest the possible coexistence of polymorphs.
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