期刊
PHYSICAL REVIEW APPLIED
卷 10, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.10.054010
关键词
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资金
- National Research, Development, and Innovation Office of Hungary (NKFIH) within the Quantum Technology National Excellence Program [2017-1.2.1-NKP-2017-00001]
- NVKP project (NKFIH Grant) [NVKP_16-1-2016-0043]
- EU QuantERA Nanospin project (NKFIH) [127902]
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer-scale device architectures for quantum information and sensing applications, where a divacancy qubit, which is similar to the negatively charged nitrogen-vacancy (NV) center in diamond, has favorable coherence properties. We demonstrate by means of density-functional-theory calculations that for most types of distortion the 3C divacancy exhibits slightly smaller spin-strain coupling parameters but greater spinstress coupling parameters in comparison with the diamond NV. We predict that high-quality 3C-SiC thin films hosting divacancy qubits are prospective platforms for quantum-enhanced pressure-sensor devices.
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