期刊
ACS PHOTONICS
卷 6, 期 2, 页码 538-544出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.8b01550
关键词
type-II superlattice; photodetector; mid-infrared; molecular beam epitaxy; silicon photonics
类别
资金
- EPSRC [EP/N018605/1]
- Royal Academy of Engineering [10216/114]
- Joy Welch Educational Charitable Trust
- Lancaster University Research Committee
- EPSRC [EP/N018605/1] Funding Source: UKRI
Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at similar to 5.5 mu m and a dark current density of 1.4 x 10(-2) A/cm(2) under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 x 10(10) Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits.
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