4.8 Article

Doped, conductive SiO2 nanoparticles for large microwave absorption

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LIGHT-SCIENCE & APPLICATIONS
卷 7, 期 -, 页码 -

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CHINESE ACAD SCIENCES, CHANGCHUN INST OPTICS FINE MECHANICS AND PHYSICS
DOI: 10.1038/s41377-018-0088-8

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  1. U.S. National Science Foundation [DMR-1609061]
  2. College of Arts and Sciences, University of Missouri-Kansas City
  3. National Science Fund for Distinguished Young Scholars of China [61525404]
  4. National Natural Science Foundation of China [51372080, U1765105]
  5. National Key Research and Development Program of China [2016YFB0901600]

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Although many materials have been studied for the purpose of microwave absorption, SiO2 has never been reported as a good candidate. In this study, we present for the first time that doped, microwave conductive SiO2 nanoparticles can possess an excel lent microwave absorbing performance. A large microwave reflection loss (RL) of -55.09 dB can be obtained. The large microwave absorption originates mainly from electrical relaxation rather than the magnetic relaxation of the incoming microwave field. The electrical relaxation is attributed to a large electrical conductivity that is enabled by the incorporation of heterogeneous (N, C and Cl) atoms. The removal of the magnetic susceptibility only results in a negligible influence of the microwave absorption. In contrast, the removal of the heterogeneous atoms leads to a large decrease in the electrical conductivity and microwave absorption performance. Meanwhile, the microwave absorption characteristics can be largely adjusted with a change of the thickness, which provides large flexibility for various microwave absorption applications.

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