期刊
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
卷 8, 期 6, 页码 613-621出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2018.2871360
关键词
German REceiver for Astronomy at Terahertz frequencies (GREAT); plasmonic detection; Stratospheric Observatory for Infrared Astronomy (SOFIA); terahertz (THz) detectors; THz quantum cascade laser (QCL)
资金
- Research Council of Lithuania [S-LAT-17-3]
- Marie Curie European Training Networks ITN CELTA [675683]
- Marie Curie Actions (MSCA) [675683] Funding Source: Marie Curie Actions (MSCA)
We report on circuit simulation, modeling, and characterization of field-effec transistor based terahertz (THz) detectors (TeraFETs) with integrated patch antennas for discrete frequencies from 1.3 to 5.7 THz. The devices have been fabricated using a standard 90-nm CMOS technology. Here, we focus in particular on a device showing the highest sensitivity to 4.75-THz radiation and its prospect to be employed for power monitoring of a THz quantum cascade laser used in a heterodyne spectrometer GREAT (German REceiver for Astronomy at Terahertz frequencies). We show that a distributed transmission line based detector model can predict the detector's performance better than a device model provided by the manufacturer. The integrated patch antenna of the TeraFET designed for 4.75 THz has an area of 13 x 13 mu m(2) and a distance of 2.2 mu m to the ground plane. The modeled radiation efficienc at the target frequency is 76% with a maximum directivity of 5.5, resulting in an effective area of 1750 mu m(2). The detector exhibits an area-normalized minimal noise-equivalent power of 404 pW/root Hz and a maximum responsivity of 75 V/W. These values represent the state of the art for electronic detectors operating at room-temperature and in this frequency range.
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