期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 9, 期 1, 页码 325-330出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2882206
关键词
Absorber formation; alkali treatment; record efficiency; sulfurization after selenization (SAS); thin film Cu(In,Ga)(Se, S)(2) solar cell; two-step process
资金
- Photovoltaic Research and Development Program of the New Energy and Industrial Technology Development Organization of the Ministry of Economy, Trade and Industry of Japan
An efficiency of 22.9% for 1-cm(2)-sized Cu(ln,Ga) (Se,S)(2) solar cells has been independently verified, establishing a record device efficiency for thin-film polycrystalline solar cells. The main improvement in the solar cell device is due to a reduction in the deficit of the open-circuit voltage (V-oc), which is notably suppressed by modifying the absorber formation. This is presumably due to reduced defect density, as suggested by the enhanced photoluminescence performance. Such improvement in the absorber quality allowed for an opportunity to benefit from the effects of a wider absorber bandgap. The reverse saturation current density and V-oc were significantly improved. Meanwhile, heavier alkali treatment on the absorber surface using cesium was adopted to further boast the device performance. As a result, the significant enhancements in V-oc and fill factor led to the achievement of this record-breaking efficiency. These findings have been systematically reproduced and will be leveraged to improve the module performance of Solar Frontier's production in the near future.
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