期刊
ADVANCED OPTICAL MATERIALS
卷 7, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201801290
关键词
light emitting transistors; low threshold voltage; super yellow; work function; zinc-oxynitride
资金
- National Research Foundation of Korea [NRF-2017R1A2B2012971, NRF-2017R1D1A1B03032375]
- Ministry of Trade, Industry Energy (MOTIE) [10051954]
- Korea Display Research Corporation (KDRC)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10051954] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The electrical and optical properties of inorganic-organic hybrid light emitting transistors (HLETs) are investigated, which are fabricated using the n-type semiconductor zinc-oxynitride (ZnON) as an electron transporting layer and the poly(p-phenylene vinylene)-based copolymer, Super Yellow (SY), as the light emitting layer. Additionally, the influence of various source (S)-drain (D) electrodes (Al, Ag, and Au) with different work functions (WFs) (4.1, 4.6, and 5.1 eV, respectively) on the performance of HLETs is studied. In order to increase the rate of hole injection from the metal electrodes and increase hole accumulation at the emissive layer, the use of a molybdenum oxide (MoOx) interlayer is also investigated. As a result, optimized devices using MoOx/Au hole injecting electrodes yield high brightness of up to 3.04 x 10(4) cd center dot m(-2) at a low threshold voltage of 4.79 V. This study provides valuable information about the role of the WF of S-D electrodes in HLETs, which may be exploited to improve the device performance of optoelectronic devices in the future.
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